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| P Channel Mode MOSFET with Schottky STM5853 -3.6A DESCRIPTION STM5853 is the P-Channel logic enhancement mode power field effect transistors with Schottky Diode. The MOSFET is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. This device is particularly suited for charging switch for cellular phone and other battery powered circuits PIN CONFIGURATION DFN8 FEATURE -20V/-3.4A, RDS(ON) = 77m-ohm(Typ.) @VGS = -4.5V -20V/-2.4A, RDS(ON) = 98m-ohm @VGS = -2.5V -20V/-1.7A, RDS(ON) = 135m-ohm @VGS = -1.8V 20V/1.0A, Vf =0.46V @ 0.5A Super high density cell design for extremely low RDS(ON) J: Part Marking X: Year Code A: Process Code ORDERING INFORMATION Part Number STM5853QF8RG Package DFN8 Part Marking SYA Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) STM5853QF8RG QF8 : QFN8; R: Tape Reel ; G: Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1 P Channel Mode MOSFET with Schottky STM5853 -3.6A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Drain-Source Voltage Reverse Voltage (Schottky) Gate-Source Voltage Continuous Drain Current (TJ=150 ) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient All data are for MOSFET unless otherwise noted. TA=25 TA=70 TA=25 TA=70 Symbol VDSS VKA VGSS ID Typical -20 20 +/-12 -3.6 -2.8 -15 -1.8 2.1 1.1 150 -55/150 60 Unit V V V A IDM IS PD TJ TSTG RJA A A W /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1 P Channel Mode MOSFET with Schottky STM5853 -3.6A ELECTRICAL CHARACTERISTICS (Ta = 25 unless otherwise noted ) MOSFET Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=-6V, VGS =-4.5V ID=-2.8A VDS=-6V, VGS =0V f=1MHz VDD=-6V,RL=6 ID=-1A,VGEN=-4.5V RG=6 4.8 1.0 1.0 485 85 40 10 13 18 15 25 60 70 60 8 nC V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS=0V,ID=-250uA -20 VDS=VGS,ID=-250uA -0.35 VDS=0V,VGS=+/-12V VDS=-20V,VGS=0V VDS=-20V, VGS =0V Tj=55 VDS-5V, VGS =-4.5V -6.0 VGS =-4.5V, ID=3.4A VGS =-2.5V, ID=-2.4A VGS =-1.8V, ID=-1.7A VDS =-5V, ID=-2.8V IS=-1.6A,V VGS=0V 0.077 0.098 0.135 6 -0.8 -0.8 100 -1 -5 V V nA uA A S V Symbol Condition Min Typ Max Unit -1.2 pF nS SCHOTTKY Forward Voltage Drop Max Reverse Leakage Current Junction Capacitance VF IR CT IF=0.5A IF=0.5A, Tj=125C VR=20V VR=20V, Tj=85C VR=10V 0.38 0.33 0.46 0.4 100 1000 V V nA pF 31 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1 P Channel Mode MOSFET with Schottky STM5853 -3.6A TYPICAL CHARACTERICTICS (25 unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1 P Channel Mode MOSFET with Schottky STM5853 -3.6A TYPICAL CHARACTERICTICS (25 unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1 P Channel Mode MOSFET with Schottky STM5853 -3.6A TYPICAL CHARACTERICTICS (25 unless noted) Schottky STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1 P Channel Mode MOSFET with Schottky STM5853 -3.6A DFN8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1 |
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